3DIC Structure and Methods of Forming

ABSTRACT

A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of a variety ofelectronic components (e.g., transistors, diodes, resistors, capacitors,etc.). For the most part, this improvement in integration density hascome from repeated reductions in minimum feature size (e.g., shrinkingthe semiconductor process node towards the sub-20 nm node), which allowsmore components to be integrated into a given area. As the demand forminiaturization, higher speed and greater bandwidth, as well as lowerpower consumption and latency has grown recently, there has grown a needfor smaller and more creative packaging techniques of semiconductordies.

As semiconductor technologies further advance, stacked semiconductordevices, e.g., 3D integrated circuits (3DIC), have emerged as aneffective alternative to further reduce the physical size of asemiconductor device. In a stacked semiconductor device, active circuitssuch as logic, memory, processor circuits and the like are fabricated ondifferent semiconductor wafers. Two or more semiconductor wafers may beinstalled on top of one another to further reduce the form factor of thesemiconductor device.

Two semiconductor wafers may be bonded together through suitable bondingtechniques. The commonly used bonding techniques include direct bonding,chemically activated bonding, plasma activated bonding, anodic bonding,eutectic bonding, glass frit bonding, adhesive bonding,thermo-compressive bonding, reactive bonding and/or the like. Anelectrical connection may be provided between the stacked semiconductorwafers. The stacked semiconductor devices may provide a higher densitywith smaller form factors and allow for increased performance and lowerpower consumption.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 depicts a cross-sectional view of an intermediate stage offorming an interconnect structure between two bonded wafers or dies inaccordance with some exemplary embodiments;

FIG. 2 depicts a cross-sectional view of an intermediate stage offorming an interconnect structure between two bonded wafers or dies inaccordance with some exemplary embodiments;

FIG. 3 depicts a cross-sectional view of an interconnect structurebetween two bonded wafers or dies in accordance with some exemplaryembodiments;

FIG. 4 depicts plan views of a top surface of two wafers in accordancewith some exemplary embodiments; and

FIG. 5 depicts plan views of a top surface of two wafers in accordancewith some exemplary embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIGS. 1-3 illustrate various intermediate steps of forming aninterconnect structure between two bonded wafers or dies in accordancewith some embodiments. Referring first to FIG. 1, a first wafer 100 anda second wafer 200 are shown prior to a bonding process in accordancewith various embodiments. In some embodiments, second wafer 200 hassimilar features as first wafer 100, and for the purpose of thefollowing discussion, the features of second wafer 200 having referencenumerals of the form “2xx” are similar to features of first wafer 100having reference numerals of the form “1xx,” the “xx” being the samenumerals for first wafer 100 and second wafer 200. The various elementsof first wafer 100 and second wafer 200 will be referred to as the“first <element> 1xx” and the “second <element> 2xx,” respectively.

In some embodiments described herein, second wafer 200 is represented asbeing similar to first wafer 100. However, one of ordinary skill in theart will appreciate that examples described herein are provided forillustrative purposes only to further explain applications of someillustrative embodiments and are not meant to limit the disclosure inany manner. In some embodiments, second wafer 200 may comprise devicesand circuitry that is different from first wafer 100. For example, inother embodiments, first wafer 100 may be fabricated using a CMOSprocess while second wafer 200 may be manufactured using a MEMS process.As another example, in some embodiments, first wafer 100 may be anapplication-specific integrated circuit (ASIC) wafer and second wafer200 may be a CMOS image sensor (CIS) wafer. Any type of wafer that issuitable for a particular application may be used for each of firstwafer 100 and second wafer 200.

In some embodiments, first wafer 100 comprises a first substrate 102having a first electrical circuit 104 formed thereon. First substrate102 may comprise, for example, bulk silicon, doped or undoped, or anactive layer of a semiconductor-on-insulator (SOI) substrate. Generally,an SOI substrate comprises a layer of a semiconductor material, such assilicon, formed on an insulator layer. The insulator layer may be, forexample, a buried oxide (BOX) layer or a silicon oxide layer. Theinsulator layer is provided on a substrate, typically a silicon or glasssubstrate. Other substrates, such as a multi-layered or gradientsubstrate may also be used.

First electrical circuit 104, formed on first substrate 102, may be anytype of circuitry suitable for a particular application. In someembodiments, first electrical circuit 104 includes electrical devicesformed on the substrate with one or more dielectric layers overlying theelectrical devices. Metal layers may be formed between dielectric layersto route electrical signals between the electrical devices. Electricaldevices may also be formed in one or more dielectric layers.

For example, first electrical circuit 104 may include various N-typemetal-oxide semiconductor (NMOS) and/or P-type metal-oxide semiconductor(PMOS) devices, such as transistors, capacitors, resistors, diodes,photo-diodes, fuses, and the like, interconnected to perform one or morefunctions. The functions may include memory structures, processingstructures, sensors, amplifiers, power distribution, input/outputcircuitry, or the like. One of ordinary skill in the art will appreciatethat the above examples are provided for illustrative purposes only tofurther explain applications of the present invention and are not meantto limit the present invention in any manner. Other circuitry may beused as appropriate for a given application.

Also shown in FIG. 1 is a first inter-layer dielectric(ILD)/inter-metallization dielectric (IMD) layer 106. First ILD layer106 may be formed, for example, of a low-K dielectric material, such asphosphosilicate glass (PSG), borophosphosilicate glass (BPSG), FSG,SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,compounds thereof, composites thereof, combinations thereof, or thelike, by any suitable method known in the art, such as spinning,chemical vapor deposition (CVD), and plasma-enhanced CVD (PECVD). Itshould also be noted that first ILD layer 106 may comprise a pluralityof dielectric layers.

First contacts 108 are formed through first ILD layer 106 to provide anelectrical contact to first electrical circuit 104. First contacts 108may be formed, for example, by using photolithography techniques todeposit and pattern a photoresist material on first ILD layer 106 toexpose portions of first ILD layer 106 that are to become first contacts108. An etch process, such as an anisotropic dry etch process, may beused to create openings in first ILD layer 106. The openings may belined with a diffusion barrier layer and/or an adhesion layer (notshown), and filled with a conductive material. The diffusion barrierlayer comprises one or more layers of TaN, Ta, TiN, Ti, CoW, or thelike, and the conductive material comprises copper, tungsten, aluminum,silver, and combinations thereof, or the like, thereby forming firstcontacts 108 as illustrated in FIG. 1.

One or more first additional ILD layers 110 and first interconnect lines112 form metallization layers over first ILD layer 106. Generally, theone or more first additional ILD layers 110 and the associatedmetallization layers are used to interconnect the electrical circuitryto each other and to provide an external electrical connection. Firstadditional ILD layers 110 may be formed of a low-K dielectric material,such as fluorosilicate glass (FSG) formed by PECVD techniques orhigh-density plasma chemical vapor deposition (HDPCVD) or the like, andmay include intermediate etch stop layers.

One or more etch stop layers (not shown) may be positioned betweenadjacent ones of the ILD layers, e.g., first ILD layer 106 and firstadditional ILD layers 110. Generally, the etch stop layers provide amechanism to stop an etching process when forming vias and/or contacts.The etch stop layers are formed of a dielectric material having adifferent etch selectivity from adjacent layers, e.g., the underlyingfirst substrate 102 and the overlying ILD layers 106/110. In anembodiment, etch stop layers may be formed of SiN, SiCN, SiCO, CN,combinations thereof, or the like, deposited by CVD or PECVD techniques.

First external contacts 114 are formed on a top surface of first wafer100, and second external contacts 214 are formed on a top surface ofsecond wafer 200. In some embodiments, first wafer 100 and second wafer200 are arranged in a face to face configuration with the device sidesof first substrate 102 and second substrate 202 facing each other(depicted in FIGS. 2 and 3). First external contacts 114 and secondexternal contacts 214 may be positioned on the top surfaces of therespective wafers so that certain contacts are in physical contact whenfirst wafer 100 and second wafer 200 are arranged with the device sidesfacing each other, and therefore provide a means for electricalconnection between first wafer 100 and second wafer 200 after they arearranged in the face to face configuration.

In some embodiments, first external contacts 114 are formed using thesame or similar procedures described above in connection with firstinterconnect lines 112. For example, photolithography techniques may beused to deposit and pattern a photoresist material on first additionalILD layers 110 to expose portions of the uppermost first additional ILDlayer 110 that are to become first external contacts 114. An etchprocess, such as an anisotropic dry etch process, may be used to createopenings in the uppermost first additional ILD layer 110. The openingsmay be lined with a diffusion barrier layer and/or an adhesion layer(not shown), and filled with a conductive material. The diffusionbarrier layer comprises one or more layers of TaN, Ta, TiN, Ti, CoW, orthe like, and the conductive material comprises copper, tungsten,aluminum, silver, and combinations thereof, or the like, thereby formingfirst external contacts 114 as illustrated in FIG. 1.

First external contacts 114 may include first connection pads 114 a andfirst dummy pads 114 b. First connection pads 114 a are pads that, asdiscussed above, provide an electrical connection between first wafer100 and second wafer 200 when the wafers are arranged in a face to faceconfiguration. First dummy pads 114 b are floating contacts that are notused for electrical connections, but are included to reduce metaldishing and uneven erosion effects on the top surface of first wafer 100caused by a planarization process performed on the top surface of thefirst wafer 100. For example, in order for first wafer 100 and secondwafer 200 to have a strong bond, the top surfaces of each wafer undergoa planarization process, such as a chemical mechanical polishing process(CMP). If only first connection pads 114 a are present, then the CMPprocess may result in significant metal dishing and/or significantuneven erosion of the top surface of first wafer 100. First dummy pads114 b are therefore included to provide a more uniform surface for theCMP process, which reduces metal dishing and uneven erosion effects onthe top surface of first wafer 100 caused by the CMP process.

To reduce metal dishing and erosion effects from the planarizationprocess, first external contacts 114 may be distributed uniformly orsubstantially uniformly. The (substantially) uniformly distributed firstexternal contacts 114 may be distributed throughout an entirety orsubstantially the entirety of (for example, more than 90 or 95 percent)of a top surface of first wafer 100. The (substantially) uniformlydistributed first external contacts 114 may extend all the way to theedges of the top surface of first wafer 100. Furthermore, all orsubstantially all of first external contacts 114 throughout the entirefirst wafer 100 may have a same top-view shape, a same top-view size,and/or a same pitch. In some embodiments, first external contacts mayhave different top-view sizes or top view shapes. In some embodiments,first external contacts may have top view shapes of circles, squares,polygons, or the like. First external contacts 114 may have a uniformpattern density throughout first wafer 100.

As depicted in FIG. 1, first external contacts 114 may be directlyconnected to one or more underlying first interconnect lines 112 infirst wafer 100. First connection pads 114 a are and second connectionpads 214 a are arranged on the top surfaces of first wafer 100 andsecond wafer 200 so that a corresponding first connection pad 114 a onfirst wafer 100 and second connection pad 214 a on second wafer 200 willbe physically connected when first wafer 100 and second wafer 200 arearranged in a face to face configuration with the device sides of firstsubstrate 102 and second substrate 202 facing each other (depicted inFIGS. 2 and 3). First connection pads 114 a and second connection pads214 a therefore provide a means for electrical connection between firstinterconnect lines 112 and second interconnect lines 212 after thewafers are arranged in the face to face configuration.

As depicted in FIG. 1, first dummy pads 114 b may also be directlyconnected to one or more first interconnect lines 112 in first wafer100. As such, if first dummy pads 114 b are in physical contact withsecond dummy pads 214 b when first wafer 100 and second wafer 200 arearranged in the face to face configuration, an undesirable andunintended short circuit will be created between first interconnectlines 112 in first wafer 100 and second interconnect lines 212 in secondwafer 200. Currently, certain packages are formed so that a topinterconnect layer is recessed into the substrate away from the externalcontacts. Each connection pad in these packages is connected to the topinterconnect layer by a conductive via. Dummy pads in these packages arenot connected to the top interconnection layer by a conductive via. Assuch, the dummy pads are floating connectors in these packages. In thesepackages, dummy pads and connection pads may be placed in correspondinglocations in a first wafer and a second wafer, so that when the firstwafer and the second wafer are arranged in a face to face configurationthe connection pads on the first wafer physically contact thecorresponding connection pad on the second wafer, and dummy pads on thefirst wafer will physically contact dummy pads in the second wafer.Electrical short circuits are prevented from being created by the dummypads by the fact that the dummy pads are floating connectors and aren'tconnected to the uppermost interconnection layer.

Notably, the above configuration requires that a layer of conductivevias be formed in each of the first wafer and the second wafer, whichrequires additional processing time, cost, and consumes additional spacein the package. In some embodiments, first dummy pads 114 b and seconddummy pads 214 b may be positioned on the top surface of first wafer 100and second wafer 200, respectively, so that first dummy pads 114 b infirst wafer 100 and second dummy pads 214 b in second wafer 200 areoffset from each other as shown in FIG. 1, while first connection pads114 a in first wafer 100 and second connection pads 214 a in secondwafer 200 are positioned in corresponding locations. If first dummy pads114 b in first wafer 100 and second dummy pads 214 b second wafer 200are positioned in a manner that is offset from each other, no physicalconnection or electrical connection between the dummy pads is createdwhen first wafer 100 is bonded to second wafer 200. The offsetpositioning of first dummy pads 114 b in first wafer 100 and seconddummy pads 214 b in second wafer 200 may prevent a short circuit frombeing created. Therefore, the offset positioning of first dummy pads 114b and second dummy pads 214 b may enable the package to be formedwithout any conductive vias connecting the first connection pads 114 ato the top first interconnect lines 112, and/or without any conductivevias connecting the second connection pads 214 a to the top secondinterconnect lines 212, which may reduce costs and processing times forthe packages.

Next, referring to FIG. 2, first wafer 100 and second wafer 200 arearranged in the face-to face configuration for bonding. As discussedabove, before being arranged, first wafer 100 and second wafer 200 mayundergo a planarization process to ensure an even bonding surface existsat a top surface of each of first wafer 100 and second wafer 200.

Next, referring to FIG. 3, first wafer 100 is bonded to second wafer200. To prepare first wafer 100 and second wafer 200 for bonding,surface cleaning and surface activation of first wafer 100 and secondwafer 200 may be performed. The surface cleaning is performed to removeCMP slurry and native oxide layers from surfaces of first wafer 100 andsecond wafer 200. The surface cleaning process may include methods withdirect and non-direct contact with the surfaces of the first wafer 100and the second wafer 200, such as cryogenic cleaning, mechanical wipingand scrubbing, etching in a gas, plasma or liquid, ultrasonic andmegasonic cleaning, laser cleaning, and the like. Subsequently, thesecond wafer 200 may be rinsed in de-ionized (DI) water and dried usinga spin dryer or an isopropyl alcohol (IPA) dryer. In other embodiments,first wafer 100 and second wafer 200 may be cleaned using RCA clean, orthe like.

In reference to FIG. 3, first wafer 100 is bonded to second wafer 200.In some embodiments, first wafer 100 and second wafer 200 may be bondedusing, for example, a direct bonding process such as metal-to-metalbonding (e.g., copper-to-copper bonding), dielectric-to-dielectricbonding (e.g., oxide-to-oxide bonding), metal-to-dielectric bonding(e.g., oxide-to-copper bonding), hybrid bonding (e.g., simultaneousmetal-to-metal and dielectric-to-dielectric bonding), any combinationsthereof and/or the like. The surface activation may be performed toprepare first wafer 100 and second wafer 200 for bonding. The surfaceactivation process may include suitable processes, such as plasma etchor wet etch processes to remove native oxides, which may be formed afterthe wafer cleaning process, from the surfaces of first wafer 100 andsecond wafer 200. Subsequently, first wafer may be rinsed in de-ionized(DI) water and dried using a spin dryer or an isopropyl alcohol (IPA)dryer.

For example, first wafer 100 and second wafer 200 may be bonded usinghybrid bonding. First connection pads 114 a of first wafer 100 arerespectively aligned to second connection pads 214 a of second wafer200. For example, in some embodiments, the surfaces of first wafer 100and second wafer 200 may be put into physical contact at roomtemperature, atmospheric pressure, and ambient air, and first connectionpads 114 a and second connection pads 214 a may be bonded using directmetal-to-metal bonding. At the same time, the uppermost first additionalILD layer 110 of first wafer 100 and the uppermost second additional ILDlayer 210 of second wafer 200 may be bonded using directdielectric-to-dielectric bonding. Subsequently, annealing may beperformed to enhance the bonding strength between first wafer 100 andsecond wafer 200.

It should be noted that the bonding may be performed at wafer level,wherein first wafer 100 and second wafer 200 are bonded together, andare then singulated into separated dies. Alternatively, the bonding maybe performed at the die-to-die level, or the die-to-wafer level.

Referring to FIG. 4, plan views of the top surfaces of first wafer 100and second wafer 200 are shown in accordance with some embodiments. Thecross sectional views of FIGS. 1-3 of first wafer 100 are taken alongthe line X-X of first wafer 100, and the cross sectional views of FIGS.1-3 of second wafer 200 are taken along the line Y-Y of second wafer200. As shown in FIG. 4, first connection pads 114 a on first wafer 100and second connection pads 214 a on second wafer 200 are positioned incorresponding locations so that respective first connection pads 114 aand second connection pads 214 a are in physical contact when firstwafer 100 and second wafer 200 are arranged in a face to faceconfiguration.

As shown in FIG. 4, the top surfaces of first wafer 100 and second wafer200 also respectively include first dummy pads 114 b and second dummypads 214 b. First dummy pads 114 b on first wafer 100 are positioned sothat they are offset from the positions of second dummy pads 214 b onsecond wafer 200. The positions of second dummy pads 214 b are depictedon first wafer 100 in FIG. 4 to illustrate the offset positioning offirst dummy pads 114 b and second dummy pads 214 b, although thephysical location of second dummy pads 214 b are on the top surface ofsecond wafer 200 and not on first wafer 100. Similarly, the positions offirst dummy pads 114 b are depicted on first wafer 100 in FIG. 4 toillustrate the offset positioning of first dummy pads 114 b and seconddummy pads 214 b, although the physical location of second dummy pads214 b are on the top surface of second wafer 200 and not on first wafer100.

As shown in FIG. 4, in some embodiments first dummy pads 114 b arepositioned on the top surface of first wafer 100 so that four adjacentfirst dummy pads 114 b form a rhombus shape. Second dummy pads 214 b onsecond wafer 200 are also positioned in a complementary manner so thatfour adjacent second dummy pads 214 b on a top surface of second wafer200 form a rhombus shape. The rhombus shapes formed by adjacent firstdummy pads 114 may be interleaved with the rhombus shapes formed byadjacent second dummy pads 214 b when first wafer is 100 is bonded tosecond wafer 200. The distance between adjacent first dummy pads 114 bon the top surface of first wafer 100 may vary according to the size offirst wafer 100 and second wafer 200. In some embodiments, the distancebetween adjacent first dummy pads 114 b along the top surface of firstwafer 100 may be about 0.05 μm to about 10.0 μm. Similarly, the distancebetween adjacent second dummy pads 214 b on the top surface of secondwafer 200 may vary according to the sizes of first wafer 100 and secondwafer 200. In some embodiments, the distance between adjacent seconddummy pads 214 b along the top surface of second wafer 200 may be about0.05 μm to about 10.0 μm

In some embodiments, first connection pads 114 a may be included as oneor more points of a rhombus shape on a top surface of first wafer 100.However, in some embodiments the positioning of first connection pads114 a is dependent upon the layout of the underlying electrical circuitsand first connection pads 114 a may be positioned outside of a rhombusshape. Similarly, in some embodiments second connection pads 214 a maybe included as one or more points of a rhombus shape on a top surface ofsecond wafer 200. However, in some embodiments the positioning of secondconnection pads 214 a is dependent upon the layout of the underlyingelectrical circuits and second connection pads 214 a may be positionedoutside of a rhombus shape.

In some embodiments, the positioning of the first dummy pads 114 b maybe affected by the design of uppermost first interconnect lines 112. Forexample, in some embodiments first dummy pads 114 b and second dummypads 214 b may be positioned in a manner that does not overlie anuppermost interconnect line of first interconnect lines 112. In someembodiments, as shown in FIGS. 1-3, first dummy pads 114 b overlie andcontact first interconnect lines 112. In some embodiments, the positionof a particular first dummy pad 114 b may overlie more than oneinterconnect line of first interconnect lines 112. As such, it ispossible that first dummy pad 114 b may create an undesirable shortcircuit between two adjacent interconnect lines of first interconnectlines 112. In such a situation, the particular first dummy pad 114 b maybe slightly moved or removed in order to avoid creating a short circuitbetween two adjacent interconnect lines of uppermost first interconnectlines 112.

Because of the offset positioning of first dummy pads 114 b and seconddummy pads 214 b, in some embodiments no physical connection is createdbetween first dummy pads 114 b on first wafer 100 and second dummy pads214 b when the wafers are arranged in a face to face configuration andunintended short circuits may be avoided. Because of the offsetpositioning of first dummy pads 114 b and second dummy pads 214 b, insome embodiments one or more conductive vias between first connectionpads 114 a and uppermost first interconnect lines 112 in first wafer 100are unnecessary to electrically isolate first dummy pads 114 b and avoidshort circuits. Similarly, in some embodiments, because of the offsetpositioning of first dummy pads 114 b and second dummy pads 214 b, insome embodiments one or more conductive vias between the secondconnection pads 214 a and an uppermost second interconnect lines 212 insecond wafer 200 are unnecessary to electrically isolate the seconddummy pads 214 b and avoid short circuits. As such, the costs andprocessing time of forming the conductive vias may be avoided.

Other embodiments are possible. FIG. 5 depicts plan views of the topsurfaces of first wafer 100 and second wafer 200 are shown in accordancewith some embodiments. The cross sectional views of FIGS. 1-3 of firstwafer 100 are taken along the line X-X of first wafer 100, and the crosssectional views of FIGS. 1-3 of second wafer 200 are taken along theline Y-Y of second wafer 200.

As shown in FIG. 5, in some embodiments first dummy pads 114 b andsecond dummy pads 214 b may be arranged on top surfaces of first wafer100 and second wafer 200, respectively, in interleaved straight lines.The straight lines are interleaved in the sense that when first wafer100 and second wafer 200 are arranged in a face to face configuration,the straight lines of first dummy pads 114 b are offset from andinterleaved with the straight lines of second dummy pads 214 b.

The example layouts of first dummy pads 114 b on first wafer 100 andsecond dummy pads 214 b on second wafer 200 as shown in FIGS. 4 and 5are intended as examples only. Other patterns and designs that aresuitable for particular applications may be used.

The distance between adjacent first dummy pads 114 b in a straight lineon the top surface of first wafer 100 may vary according to the size offirst wafer 100 and second wafer 200. In some embodiments, the distancebetween adjacent first dummy pads 114 b in a straight line along the topsurface of first wafer 100 may be about 0.05 μm to about 10.0 μm,Similarly, the distance between adjacent second dummy pads 214 b in astraight line on the top surface of second wafer 200 may vary accordingto the sizes of first wafer 100 and second wafer 200. In someembodiments, the distance between adjacent second dummy pads 214 b in astraight line along the top surface of second wafer 200 may be about0.05 μm to about 10.0 μm,

The distance between adjacent straight lines of first dummy pads 114 bon the top surface of first wafer 100 may vary according to the size offirst wafer 100 and second wafer 200. In some embodiments, the distancebetween adjacent straight lines of first dummy pads 114 b along the topsurface of first wafer 100 may be about 0.05 μm to about 10.0 μm,Similarly, the distance between adjacent straight lines of second dummypads 214 b along the top surface of second wafer 200 may vary accordingto the sizes of first wafer 100 and second wafer 200. In someembodiments, the distance between adjacent straight lines of seconddummy pads 214 b along the top surface of second wafer 200 may be about0.05 μm to about 10.0 μm.

In some embodiments, first connection pads 114 a may be included as oneor more points of a straight line of first dummy pads 114 b on a topsurface of first wafer 100. However, in some embodiments the positioningof first connection pads 114 a is dependent upon the layout of theunderlying electrical circuits, and first connection pads 114 a may bepositioned outside of a straight line of first dummy pads 114 b.Similarly, in some embodiments second connection pads 214 a may beincluded as one or more points of a straight line of second dummy pads214 b on a top surface of second wafer 200. However, in some embodimentsthe positioning of second connection pads 214 a is dependent upon thelayout of the underlying electrical circuits, and second connection pads214 a may be positioned outside of a straight line of second dummy pads214 b.

Because of the offset positioning of the interleaved straight lines, insome embodiments no physical connection is created between first dummypads 114 b on first wafer 100 and second dummy pads 214 b on secondwafer 200 when the wafers are arranged in a face to face configuration,and unintended short circuits may be avoided. Because of the offsetpositioning of first dummy pads 114 b and second dummy pads 214 b, insome embodiments one or more conductive vias between first connectionpads 114 a and uppermost first interconnect lines 112 in first wafer 100are unnecessary to electrically isolate first dummy pads 114 b and avoidshort circuits. Similarly, in some embodiments, because of the offsetpositioning of first dummy pads 114 b and second dummy pads 214 b, insome embodiments one or more conductive vias between the secondconnection pads 214 a and an uppermost second interconnect lines 212 insecond wafer 200 are unnecessary to electrically isolate the seconddummy pads 214 b and avoid short circuits. As such, the costs andprocessing time of forming the conductive vias may be avoided.

An embodiment is a structure that includes a first dielectric layeroverlying a first substrate. A first connection pad is disposed in a topsurface of the first dielectric layer and contacts a first conductordisposed in the first dielectric layer. A major surface of the conductorextends in a direction that is parallel to the top surface of the firstdielectric layer. A first dummy pad is disposed in the top surface ofthe first dielectric layer, the first dummy pad contacting the firstconductor. A second dielectric layer overlies a second substrate. Asecond connection pad and a second dummy pad are disposed in the topsurface of the second dielectric layer, the second connection pad bondedto the first connection pad, and the first dummy pad positioned in amanner that is offset from the second dummy pad so that the first dummypad and the second dummy pad do not contact each other.

A further embodiment is a method. The method includes providing a firstwafer having a plurality of first dummy pads on a top surface of thefirst wafer. The first dummy pads contact a first metallization layer ofthe first wafer. The metallization layer extends in a direction that isparallel to a major surface of the first wafer. The method also includesproviding a second wafer having a plurality of second dummy pads on atop surface of the second wafer. The second dummy pads contact a secondmetallization layer of the second wafer. The method also includesbonding the first wafer to the second wafer in a manner that the topsurface of the first wafer contacts the top surface of the second waferand the plurality of first dummy pads are interleaved with the pluralityof second dummy pads but do not contact the plurality of second dummypads.

A further embodiment is a structure. The structure includes a firstwafer, which includes a first substrate. A first dielectric layeroverlies the first substrate. A first metallization layer is disposed inthe first dielectric layer, the first metallization layer extending in adirection that is parallel to a major surface of the first substrate. Afirst connection pad is disposed in a top surface of the firstdielectric layer and contacting the first metallization layer. Aplurality of first dummy pads is disposed in the top surface of thefirst dielectric layer. One or more of the plurality of first dummy padscontacting the first metallization layer. The structure also includes asecond wafer that includes a second substrate. A second dielectric layeroverlies the second substrate. A second metallization layer is disposedin the second dielectric layer. A second connection pad is disposed in atop surface of the second dielectric layer and contacts the secondmetallization layer. A plurality of second dummy pads is disposed in thetop surface of the second dielectric layer and contacts the secondmetallization layer. The second metallization layer extends in adirection that is parallel to a major surface of the second substrate.The first wafer is bonded to the second wafer in a manner that the firstconnection pad contacts the second connection pad. The plurality offirst dummy pads is positioned in a manner that is offset from theplurality of second dummy pads. The foregoing outlines features ofseveral embodiments so that those skilled in the art may betterunderstand the aspects of the present disclosure. Those skilled in theart should appreciate that they may readily use the present disclosureas a basis for designing or modifying other processes and structures forcarrying out the same purposes and/or achieving the same advantages ofthe embodiments introduced herein. Those skilled in the art should alsorealize that such equivalent constructions do not depart from the spiritand scope of the present disclosure, and that they may make variouschanges, substitutions, and alterations herein without departing fromthe spirit and scope of the present disclosure.

1-7. (canceled)
 8. A method, comprising: providing a first wafer havinga plurality of first dummy pads exposed along a first surface of thefirst wafer, the plurality of first dummy pads directly contacting afirst metallization layer of the first wafer, wherein edges of the firstmetallization layer extend beyond edges of the plurality of first dummypads in directions that are parallel to a major surface of the firstwafer; providing a second wafer having a plurality of second dummy padsexposed along a first surface the second wafer, the plurality of seconddummy pads contacting a second metallization layer of the second wafer;and bonding the first wafer to the second wafer in a manner that thefirst surface of the first wafer contacts the first surface of thesecond wafer and the plurality of first dummy pads are interleaved withthe plurality of second dummy pads but do not contact the plurality ofsecond dummy pads.
 9. The method according to claim 8, wherein: thefirst wafer further comprises a plurality of first connection padsexposed along the first surface of the first wafer; and the second waferfurther comprises a plurality of second connection pads exposed alongthe first surface of the second wafer; and bonding the first wafer tothe second wafer comprises bonding one of the plurality of firstconnection pads to one of the plurality of second connection pads. 10.The method according to claim 8, wherein four of the plurality of firstdummy pads are arranged in a rhombus shape in a plan view of the firstwafer.
 11. The method according to claim 10, wherein the plurality offirst dummy pads is arranged to form a plurality of rhombus shapes in aplan view of the first wafer.
 12. The method according to claim 10,wherein the plurality of first dummy pads are arranged in a plurality ofstraight lines and the plurality of second dummy pads are arranged in aplurality of straight lines.
 13. The method according to claim 8,wherein the first wafer is bonded to the second wafer using hybridbonding.
 14. The method according to claim 8, wherein the secondmetallization layer of the second wafer extends in a direction that isparallel to a major surface of the second wafer. 15-20. (canceled)
 21. Amethod, comprising: forming a plurality of first external contacts, theplurality of first external contacts being exposed along a first surfaceof a first wafer, wherein the plurality of first external contactscomprises a plurality of first connectors and a plurality of first dummypads, wherein the plurality of first dummy pads and the plurality offirst connectors are jointly arranged so that the plurality of firstdummy pads and the plurality of first connectors are uniformlydistributed in a plan view of the first wafer, and wherein the firstwafer further comprises a plurality of conductive lines underlying theplurality of first dummy pads and the plurality of first connectors, anda first dummy pad of the plurality of first dummy pads and a firstconnector of the plurality of first connectors are directly electricallyconnected to a same underlying conductive line of the plurality ofconductive lines; forming a plurality of second external contacts, theplurality of second external contacts being exposed along a firstsurface of a second wafer, wherein the plurality of second externalcontacts comprises a plurality of second connectors and a plurality ofsecond dummy pads, wherein the plurality of second dummy pads and theplurality of second connectors are jointly arranged so that theplurality of second dummy pads and the plurality of second connectorsare uniformly distributed in a plan view of the second wafer; andbonding the first surface of the first wafer to the first surface of thesecond wafer by bonding the plurality of first connectors and theplurality of second connectors using direct metal-to-metal bonding. 22.The method according to claim 21, wherein the plurality of first dummypads are offset from the plurality of second dummy pads.
 23. The methodaccording to claim 21, wherein the plurality of first dummy pads isarranged in a rhombus pattern.
 24. The method according to claim 23,wherein the plurality of second dummy pads is arranged in a rhombuspattern.
 25. The method according to claim 24, wherein after the firstsurface of the first wafer is bonded to the first surface of the secondwafer, the rhombus pattern of the plurality of first dummy pads overlapsthe rhombus pattern of the plurality of second dummy pads.
 26. Themethod according to claim 21, wherein the plurality of first connectorsis formed in a first dielectric layer of the first wafer, the pluralityof second connectors is formed in a second dielectric layer of thesecond wafer, and wherein bonding the first surface of the first waferto the first surface of the second wafer further comprises bonding thefirst dielectric layer to the second dielectric layer; and wherein,after bonding the first surface of the first wafer to the first surfaceof the second wafer, surfaces of the plurality of first dummy padscontact the second dielectric layer and surfaces of the plurality ofsecond dummy pads contact the first dielectric layer.
 27. (canceled) 28.The method according to claim 21, wherein surfaces of each of theplurality of first dummy pads is planar with the first surface of thefirst wafer.
 29. The method according to claim 21, further comprisingperforming a planarization process on the first surface of the firstwafer and the first surface of the second wafer before bonding the firstsurface of the first wafer to the first surface of the second wafer. 30.The method according to claim 21, wherein the joint arrangement of theplurality of first dummy pads and the plurality of first connectorssubstantially covers the first surface of the first wafer.
 31. A method,comprising: providing a first substrate, wherein the first substratecomprises: a first dielectric layer; a first plurality of metal pads,wherein the first plurality of metal pads comprises a plurality of firstconnectors and a plurality of first dummy pads, and wherein the firstplurality of metal pads comprises four adjacent metal pads disposed in arhombus shape, wherein a first connector of the plurality of firstconnectors physically contacts an underlying conductive line of aplurality of conductive lines, the plurality of underlying conductivelines being routed in directions that are parallel to a major surface ofthe first substrate, and the underlying conductive line of the pluralityof conductive lines having a different size than the first connector ina plan view; providing a second substrate, wherein the second substratecomprises: a second dielectric layer; a second plurality of metal pads,wherein the second plurality of metal pads comprises a plurality ofsecond connectors and a plurality of second dummy pads, and wherein thesecond plurality of metal pads comprises four adjacent metal padsdisposed in a rhombus shape; and bonding the first dielectric layer tothe second dielectric layer.
 32. The method according to claim 31,further comprising bonding the plurality of first connectors to theplurality of second connectors.
 33. The method according to claim 31,wherein the plurality of first dummy pads are directly physicallycoupled to an underlying conductive line of the plurality of conductivelines.
 34. The method according to claim 31, wherein the plurality offirst connectors are directly electrically connected to the plurality offirst dummy pads.